Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-06-26
2011-12-20
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23144, C257SE23167, C438S667000
Reexamination Certificate
active
08080876
ABSTRACT:
A process and structure for enabling the creation of reliable electrical through-via connections in a semiconductor substrate and a process for filling vias. Problems associated with under etch, over etch and flaring of deep Si RIE etched through-vias are mitigated, thereby vastly improving the integrity of the insulation and metallization layers used to convert the through-vias into highly conductive pathways across the Si wafer thickness. By using an insulating collar structure in the substrate in one case and by filling the via in accordance with the invention in another case, whole wafer yield of electrically conductive through vias is greatly enhanced.
REFERENCES:
patent: 6919638 (2005-07-01), Huang et al.
patent: 2003/0205815 (2003-11-01), Chung
Andry Paul S.
Knickerbocker John U.
Steen Michelle L.
Tsang Cornelia K.
Aker David
International Business Machines - Corporation
Morris Daniel P.
Sandvik Benjamin
Soderholm Krista
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