Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2010-03-23
2011-11-22
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S774000, C257S775000, C257SE23026, C438S618000
Reexamination Certificate
active
08063490
ABSTRACT:
A semiconductor device includes a semiconductor constituent having a semiconductor substrate and a plurality of electrodes for external connection provided under the semiconductor substrate. An under-layer insulating film is provided under and around the semiconductor constituent. A plurality of under-layer wires are provided under the under-layer insulating film and electrically connected to the electrodes for external connection of the semiconductor constituent. An insulating layer is provided around the semiconductor constituent and on the under-layer insulating film. A frame-like insulating substrate is embedded in an upper surface of the insulating layer and positioned around the semiconductor constituent. A plurality of upper-layer wires are provided on the insulating substrate. A base plate on which the semiconductor constituent and the insulating layer are mounted is removed.
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Casio Computer Co. Ltd.
Holtz Holtz Goodman & Chick PC
Le Dung A.
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