Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-03-06
2011-11-01
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S228000, C257S292000, C257S447000, C257SE31032
Reexamination Certificate
active
08049293
ABSTRACT:
A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.
REFERENCES:
patent: 07-245386 (1995-09-01), None
patent: 2001-257337 (2001-09-01), None
patent: 2003-338615 (2003-11-01), None
Iwabuchi Shin
Maruyama Yasushi
Yanagita Takeshi
Yokota Kazuhide
Landau Matthew
Luke Daniel
Rader & Fishman & Grauer, PLLC
Sony Corporation
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