Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-08-13
2011-10-25
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185260, C365S185270, C365S185280
Reexamination Certificate
active
08045379
ABSTRACT:
A semiconductor device includes an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also includes a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.
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Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Luu Pho M
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