MOS field-effect transistor and manufacturing method thereof

Details MOS field-effect transistor and manufacturing method thereof MOS field-effect transistor and manufacturing method thereof

2007-03-13

2011-11-29

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S739000, C438S214000, C438S282000, C438S411000

Reexamination Certificate

active

08067291

ABSTRACT:
To provide a manufacturing method of a MOS field-effect transistor in which such a structure is adopted that SiGe having a large lattice constant is embedded immediately below a channel and distortion is effectively introduced in a channel Si layer so that mobility of electrons or holes are drastically improved, thereby realizing high-speed operation and low power consumption. A stressor2composed of silicon germanium is formed in a portion in an active region that is separated by an insulating film formed on a silicon substrate, a silicon channel layer1composed of silicon is formed above the stressor, and a tensile stress layer10is formed so as to surround a gate electrode and a sidewall formed on the gate electrode.

REFERENCES:
patent: 6724660 (2004-04-01), Skotnicki et al.
patent: 6815310 (2004-11-01), Roberds et al.
patent: 6881635 (2005-04-01), Chidambarrao et al.
patent: 6964911 (2005-11-01), Orlowski et al.
patent: 7057216 (2006-06-01), Ouyang et al.
patent: 7605025 (2009-10-01), Kim et al.
patent: 2003/0173617 (2003-09-01), Sato et al.
patent: 2004/0212035 (2004-10-01), Yeo et al.
patent: 9-321307 (1997-12-01), None
patent: 2001-332745 (2001-11-01), None
patent: 2002-93921 (2002-03-01), None
patent: 2002-100762 (2002-04-01), None
patent: 2003-45996 (2003-02-01), None
patent: 2003-92399 (2003-03-01), None
International Search Report of PCT/JP2004/013531, date of mailing Dec. 7, 2004.

Affiliated with

Also associated with

Rating

MOS field-effect transistor and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS field-effect transistor and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS field-effect transistor and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4268391