Semiconductor device and semiconductor device manufacturing...

Details Semiconductor device and semiconductor device manufacturing... Semiconductor device and semiconductor device manufacturing...

2009-07-06

2011-10-25

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S314000, C257S368000, C257S370000, C257S374000, C257S401000, C257S501000, C257S506000, C257S510000

Reexamination Certificate

active

08044513

ABSTRACT:
A semiconductor device includes a plurality of first MOS transistors has a first gate electrode formed on a first gate insulating film provided in a first transistor region on a semiconductor substrate, a plurality of second MOS transistors has a second gate electrode formed on a second gate insulating film which is provided in a second transistor region on the semiconductor substrate and which is smaller in thickness than the first gate insulating film, a first element isolation region in the first transistor region, the first element isolation region provided between the plurality of first MOS transistors, and a second element isolation region in the second transistor region, the second element isolation region provided between the plurality of second MOS transistors. The upper surface of the second element isolation region is lower than the upper surface of the first element isolation region.

REFERENCES:
patent: 6794708 (2004-09-01), Mori et al.
patent: 6921947 (2005-07-01), Furuta et al.
patent: 7122866 (2006-10-01), Arai et al.
patent: 7298005 (2007-11-01), Yoshikawa
patent: 2002-64157 (2002-02-01), None

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