Magnetic tunnel transistor with high magnetocurrent

Details Magnetic tunnel transistor with high magnetocurrent Magnetic tunnel transistor with high magnetocurrent

2008-04-09

2011-11-29

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C257S295000

Reexamination Certificate

active

08068317

ABSTRACT:
A magnetic tunnel transistor (MTT) having a pinned layer that has no antiferromagnetic material in an active area of the sensor. The MTT can include a layer of antiferromagnetic material that is exchange coupled with the pinned layer in an area outside of the active area of me sensor, such as outside the track-width, beyond the stripe height, or both outside the track-width and beyond the stripe height. The pinned layer can also be pinned without any exchange coupling at all. In that case, pinning can be assisted by shape enhanced magnetic anisotropy, by extending the pinned layer beyond the stripe height.

REFERENCES:
patent: 7411235 (2008-08-01), Saito et al.
patent: 7476919 (2009-01-01), Hong et al.
patent: 7652315 (2010-01-01), Saito et al.

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