Surge overcurrent protection for solid state, smart,...

Details Surge overcurrent protection for solid state, smart,... Surge overcurrent protection for solid state, smart,...

2007-06-07

2011-11-15

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S532000, C257SE29001, C257SE29218, C257SE25014, C257SE25024, C257SE27034

Reexamination Certificate

active

08058700

ABSTRACT:
An improvement for a smart, highside, high current, power switch module formed in an integrated circuit having at least one composite MOS/FET transistor switch connected to controlling and protection circuits. The power switch module has a load terminal (L), a battery input terminal (B), a control input terminal (C) and a diagnostic feedback terminal (M). The improvement provides overcurrent protection from a substantially instantaneous short circuit across an electrical load connected to the load terminal of the power switch module. The improvement is a capacitive circuit element connected between the battery input terminal (B) and the diagnostic feedback terminal (M). The capacitance of the capacitive circuit element should be at least large enough that the capacitive circuit element applies a power supply voltage to the controlling and protection circuits for a time interval that maintains the protection circuits operative and able to turn OFF the MOS/FET transistor switch in the event of the short circuit.

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