Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2009-10-21
2011-11-15
Lebentritt, Michael (Department: 2829)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S114000, C438S465000, C257SE21599
Reexamination Certificate
active
08058103
ABSTRACT:
A method for cutting a semiconductor substrate having a front face formed with functional devices together with a die bonding resin layer. A wafer having a front face formed with functional devices is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to form a starting point region for cutting due to a modified region within the wafer along a cutting line. When an expansion film is attached to the rear face by way of a die bonding resin layer after forming the starting point region and then expanded, a fracture can be generated from the starting point region which reaches the front face and rear face, consequently, the wafer and die bonding resin layer can be cut along the cutting line.
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Atsumi Kazuhiro
Fukumitsu Kenshi
Fukuyo Fumitsugu
Sugiura Ryuji
Uchiyama Naoki
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Lebentritt Michael
Whalen Daniel
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