Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2008-01-31
2011-11-29
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33064
Reexamination Certificate
active
08067783
ABSTRACT:
A chip includes at least one semiconductor body having a radiation-emitting region, and at least one first contact region which is provided for making electrical contact with the semiconductor body and is spaced apart laterally from the radiation-emitting region. An electrically conductive first contact layer which is transmissive to the emitted radiation and which connects a surface of the semiconductor body, is situated on the radiation exit side of the chip to the first contact region. The surface is free of the radiation-absorbing contact structures.
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Schnitzer, I., et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Applied Physics Letters 63, Oct. 18, 1993, 3 pages.
OSRAM Opto Semiconductors GmbH
Prenty Mark
Slater & Matsil L.L.P.
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