Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2010-03-04

2011-10-11

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S700000, C257SE21219

Reexamination Certificate

active

08034721

ABSTRACT:
A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

REFERENCES:
patent: 6287974 (2001-09-01), Miller
patent: 6426300 (2002-07-01), Park et al.

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