Active matrix substrate having interleaved source and drain...

Details Active matrix substrate having interleaved source and drain... Active matrix substrate having interleaved source and drain...

2004-09-08

2011-12-13

Nguyen, Hoan C (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S042000, C349S046000, C345S092000, C257S059000, C257S072000

Reexamination Certificate

active

08077266

ABSTRACT:
An active matrix includes (i) a thin film transistor including a semiconductor layer formed above a gate electrode, a source electrode, and a drain electrode, the source electrode and the drain electrode formed to overlap with the semiconductor layer; and (ii) a pixel electrode connected to the drain electrode, a pixel electrode connected to the drain electrode, the drain electrode extended from the pixel electrode into a drain electrode formation region located to be kept within a semiconductor layer formation region, the drain electrode formation region sandwiched between two portions of the source electrode. With this arrangement, even when the semiconductor layers in the TFTs (thin film transistors) have unevenness in sizes, shapes, and/or formation positions thereof, it is possible to prevent occurrence of unevenness (changes) in gate-drain capacitances cgd among the TFTs. Thereby, it is possible to provide an active matrix substrate having a high display characteristic.

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Kawase et al. “All-Polymer Thin Film Transistors Fabricated by High-Resolution Ink-ject printing” (IEEE 25.5.1-25.5.4 (2000).

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