Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-08-03
2011-12-06
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S096000, C257S097000, C257S100000, C257SE33001, C257SE31003, C438S022000, C438S046000
Reexamination Certificate
active
08071991
ABSTRACT:
The present invention provides a light-emitting diode (10) including a first conductive type silicon single crystal substrate (101), a light-emitting section (40) including a first pn junction structure composed of a III-group nitride semiconductor on the substrate, a first polarity ohmic electrode (107b) provided on the light-emitting section, and a second polarity ohmic electrode (108) on the same side as the light-emitting section with respect to the substrate, wherein a second pn junction structure (30) is configured in a region which extends from the substrate to the light-emitting section, the substrate is provided with a light-reflecting hole (109) from the back surface of the substrate opposite to the side on which the light-emitting section of the substrate is provided toward the stacking direction, and the inner surface of the light-reflecting hole and the back surface of the substrate are coated with a metallic film (110).
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Hiroo Yonezu, Optical Communication Device Engineering—Photoemitter/Photoreceptor Device—, First Edition: May 20, 1995, published by Kougakutosho Co., Ltd., © Hiroo Yonezu 1984, 3054-20194-2213.
Gebreyesus Yosef
Nguyen Cuong Q
Showa Denko K.K.
Sughrue & Mion, PLLC
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