Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2008-07-15
2011-11-01
Stark, Jarrett (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S099000, C257SE33001, C257SE33062, C257SE33006
Reexamination Certificate
active
08049229
ABSTRACT:
A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.
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Fan Michele
H.C. Park & Associates PLC
Seoul Opto Device Co., Ltd.
Stark Jarrett
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