Light emitting diode and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C257S099000, C257SE33001, C257SE33062, C257SE33006

Reexamination Certificate

active

08049229

ABSTRACT:
A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.

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patent: 2002/0017651 (2002-02-01), Kato et al.
patent: 2005/0029536 (2005-02-01), Sugitatsu et al.
patent: 2006/0157718 (2006-07-01), Seo et al.
patent: 2006/0220057 (2006-10-01), Shim et al.
patent: 2006/0231852 (2006-10-01), Kususe et al.
patent: 2007/0145391 (2007-06-01), Baik et al.
patent: 2008/0105885 (2008-05-01), Watanabe et al.

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