Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2008-04-08
2011-10-11
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S478000, C438S479000, C438S466000, C257S004000, C257S489000, C257SE21495
Reexamination Certificate
active
08034655
ABSTRACT:
A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over the first electrode. The opening includes sidewalls and a base. The opening sidewalls and base are lined with a multi-resistive state layer comprising multi-resistive state metal oxide-comprising material which less than fills the opening. A second conductive electrode of the memory cell is formed within the opening laterally inward of the multi-resistive state layer lining the sidewalls and elevationally over the multi-resistive state layer lining the base. Other aspects and implementations are contemplated.
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Sandhu Gurtej
Smythe John
Srinivasan Bhaskar
Diallo Mamadou
Micro)n Technology, Inc.
Toledo Fernando L
Wells St. John P.S.
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