Method of forming element isolation film and nonvolatile...

Details Method of forming element isolation film and nonvolatile... Method of forming element isolation film and nonvolatile...

2007-07-24

2011-10-04

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21545, C257SE21550, C438S221000, C438S296000, C438S359000, C438S362000, C438S424000, C438S435000, C438S437000, C438S439000

Reexamination Certificate

active

08030171

ABSTRACT:
An element isolation film is formed by filling an oxide in a trench formed in an element isolation region of a semiconductor substrate to thereby form an insulation film for element isolation. A method of forming the element isolation film includes a first step of depositing a material in a plasma state including oxygen and silicon on an inner surface of the trench while applying no bias voltage (or a relatively low voltage), and a second step of filling the material in a plasma state including oxygen and silicon in the trench while applying a bias voltage (or a relatively high voltage).

REFERENCES:
patent: 6313010 (2001-11-01), Nag et al.
patent: 6576530 (2003-06-01), Chen et al.
patent: 6818936 (2004-11-01), Lin et al.
patent: 2002-222855 (2002-08-01), None
patent: 2002-289683 (2002-10-01), None
patent: 2003-188251 (2003-07-01), None
patent: 2003-318257 (2003-11-01), None
patent: 2005-311279 (2005-11-01), None

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