Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2009-02-27
2011-10-25
Dang, Phuc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23142, C333S246000
Reexamination Certificate
active
08044514
ABSTRACT:
In a semiconductor integrated circuit, a second wiring layer includes a ground conductor having at least one opening formed therein. At least one opening is overlapped by at least one patch conductor included in a third wiring layer. At least one patch conductor and the ground conductor are electrically connected to each other by at least one via hole included in a second dielectric layer. A first wiring layer includes a signal line above the ground conductor.
REFERENCES:
patent: 6967557 (2005-11-01), Hagios et al.
patent: 7094624 (2006-08-01), Park et al.
patent: 7217370 (2007-05-01), Sugimoto et al.
patent: 7973245 (2011-07-01), Muramatsu et al.
patent: 2004/0211590 (2004-10-01), Tagi et al.
patent: 2009/0079523 (2009-03-01), Hsu
patent: 4-291803 (1992-10-01), None
Cantor & Colburn LLP
Dang Phuc
Rohm & Co., Ltd.
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