Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-01-22

2011-11-29

Qi, Mike (Department: 2871)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S066000, C438S149000, C438S154000

Reexamination Certificate

active

08067771

ABSTRACT:
A semiconductor device includes a p-type TFT having a first semiconductor layer, and an n-type TFT having a second semiconductor layer. A tilted portion, which is widened toward the insulating substrate side, is formed in at least a part of an outer edge portion of the first semiconductor layer. A tilt angle of a surface of the tilted portion to a surface of an insulating substrate, which is an angle formed inside the first semiconductor layer, is smaller than an angle of a side surface of an outer edge portion of the second semiconductor layer to the surface of the insulating substrate, which is an angle formed inside the second semiconductor layer.

REFERENCES:
patent: 6635521 (2003-10-01), Zhang et al.
patent: 6753549 (2004-06-01), Korenari
patent: 6803601 (2004-10-01), Nakajima
patent: 2000-196096 (2000-07-01), None
patent: 2002-343976 (2002-11-01), None
patent: 2003-174036 (2003-06-01), None
patent: 2007-27198 (2007-02-01), None

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