Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2010-09-27
2011-11-01
Gebremariam, Samuel (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S314000, C257S315000, C257S316000, C257S317000, C257S318000, C257SE27078, C257SE29309
Reexamination Certificate
active
08049298
ABSTRACT:
A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug is recessed below an upper surface of the substrate. The first dielectric plug has a layer of a first dielectric material and a layer of a second dielectric material formed on the layer of the first dielectric material. A second dielectric plug of a third dielectric material is formed on the upper surface of the first dielectric plug.
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Gebremariam Samuel
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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