Method for making a schottky diode that is compatible with high

Details Method for making a schottky diode that is compatible with high Method for making a schottky diode that is compatible with high

1991-12-03

1996-12-10

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Schottky barrier to polycrystalline semiconductor material

257477, 257484, 257486, 257510, 257515, 257755, 257757, 257764, 257765, 257770, 257771, 437 39, 437 63, 437 78, 437175, 437178, 437189, 437197, 437200, 437203, 437228, H01L 2904, H01L 21265

Patent

active

055833489

ABSTRACT:
A method for making a schottky diode structure (10) simultaneously with a polysilicon contact structure (31,33) to a transistor is provided. In a single process step, a polysilicon layer is patterned to expose a single crystal semiconductor region (22a) over one portion of a substrate, while leaving portions the polysilicon layer (31, 33, 29) intact over other portions of the substrate (22b). Multi-layer metal electrodes are deposited and patterned to form a rectifying schottky contact to the exposed single crystal region (22a), and to form an ohmic contact to the exposed polysilicon (31, 33, 29).

REFERENCES:
patent: 4278985 (1981-07-01), Stobbs
patent: 4860065 (1989-08-01), Koyama
patent: 4862244 (1989-08-01), Yamagishi
patent: 4956688 (1990-09-01), Honma et al.
patent: 5140383 (1992-08-01), Morris et al.
patent: 5144404 (1992-09-01), Iranmanesh et al.

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