Tunneling magneto-resistive spin valve sensor with novel...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C360S324200

Reexamination Certificate

active

08035931

ABSTRACT:
The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

REFERENCES:
patent: 5896252 (1999-04-01), Kanai
patent: 6127045 (2000-10-01), Gill
patent: 6452204 (2002-09-01), Ishiwata et al.
patent: 6519124 (2003-02-01), Redon et al.
patent: 6529353 (2003-03-01), Shimazawa
patent: 6563682 (2003-05-01), Sugawara et al.
patent: 6778427 (2004-08-01), Odagawa et al.
patent: 6842317 (2005-01-01), Sugita et al.
patent: 6989974 (2006-01-01), Tetsukawa et al.
patent: 7244368 (2007-07-01), Suda et al.
patent: 7323215 (2008-01-01), Li et al.
patent: 7390529 (2008-06-01), Li et al.
patent: 7390530 (2008-06-01), Wang et al.
patent: 7602590 (2009-10-01), Zhao et al.
patent: 2001/0015878 (2001-08-01), Varga et al.
patent: 2004/0008454 (2004-01-01), Gill
patent: 2000-058941 (2000-02-01), None
patent: 2002-074626 (2002-03-01), None
“Demonstrating a Tunneling Magneto-Resistive Read Head,” by Dian Song et al., IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2545-2548.
“Low-Resistance Tunnel Mangetoresistive Head,” by K. Ohashi et al., IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2549-2553.
“Spin Dependent Tunnel Junctions for Memory and Read-Head Applications,” by Paulo P. Freitas et al., IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2796-2801.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Tunneling magneto-resistive spin valve sensor with novel... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tunneling magneto-resistive spin valve sensor with novel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunneling magneto-resistive spin valve sensor with novel... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4256817

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.