Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-02-16
2011-12-27
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33072
Reexamination Certificate
active
08084776
ABSTRACT:
Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member; a reflective layer on the conductive support member; a light emitting structure on the reflective layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and an electrode on the first conductive semiconductor layer, wherein a distance between the active layer and the reflective layer satisfies 2·Φ1+Φ3=N·2π±Δ, (0≦Δ≦π/2) in which the Φ1 represents a phase change value when light vertically traveling passes through the second conductive semiconductor layer, the Φ3 represents a phase change value when the light is reflected by the reflective layer, and the N represents a natural number, and wherein the distance between the reflective layer and the active layer includes a first distance in a first region overlapping with the electrode perpendicularly to the electrode and a second distance in a second region other than the first region, the first distance being different from the second distance.
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Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Movva Amar
Smith Bradley K
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