Bipolar transistor with a reduced collector series resistance

Details Bipolar transistor with a reduced collector series resistance Bipolar transistor with a reduced collector series resistance

1996-10-07

1999-03-02

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257515, 257518, 257588, H01L 2900, H01L 27082

Patent

active

058775390

ABSTRACT:
A collector structure in a bipolar transistor on a semiconductor substrate is surrounded by trench isolations. A well region has a first impurity concentration and extends in an upper portion of the semiconductor substrate surrounded by the trench isolations. The well region is a first conductivity type and a burying layer horizontally extends under the well region. The burying layer is positioned shallower than the bottom of the trench isolations. Collector plug electrodes extend in a vertical direction and along inside walls of the trench isolations. The collector plug electrodes are the first conductivity type and have a second impurity concentration higher than the first impurity concentration. The collector plug electrodes have a bottom level which is about the same as the bottom of the trench isolations. A collector diffusion layer extends in a vertical direction and along inside vertical walls of the collector plug electrodes. The collector diffusion layer has a bottom level which extends horizontally beneath the collector plug electrodes so that the bottom of the collector diffusion layer is deeper than the bottom of the trench isolations so as to have the collector diffusion layer contact the burying layer.

REFERENCES:
patent: 4910572 (1990-03-01), Kameyama
patent: 4949151 (1990-08-01), Horiuchi et al.
patent: 4992843 (1991-02-01), Blossfeld et al.
patent: 5003365 (1991-03-01), Havemann et al.

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