Method of making high density memory cells with improved metal-t

Details Method of making high density memory cells with improved metal-t Method of making high density memory cells with improved metal-t

1980-03-21

1983-02-08

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29591, H01L 2128

Patent

active

043720315

ABSTRACT:
Semiconductor read only memory (ROM) or electrically programmable memory (EPROM) devices are constructed using a metal-to-silicon contact arrangement which provides small cell size. An intervening polysilicon segment allows the silicon region underlying a metal contact area to be much smaller than in prior cells. The layout and cell structure provides a high density array. The use of the polysilicon segment also prevents the occurance of problems with spiking of metal through shallow implanted N+ regions.

REFERENCES:
patent: 3541543 (1970-11-01), Crawford et al.
patent: 3914855 (1975-10-01), Cheney et al.
patent: 3984822 (1976-10-01), Simko et al.
patent: 4055444 (1977-10-01), Rao
patent: 4112509 (1978-09-01), Wall
patent: 4151021 (1979-04-01), McElroy
patent: 4230504 (1980-10-01), Kuo

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