Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-11-09
2011-11-15
Andujar, Leonardo (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C438S026000
Reexamination Certificate
active
08058662
ABSTRACT:
The present invention relates to a light emitting diode and a method of fabricating the same, wherein the distance between a fluorescent substance and a light emitting diode chip is uniformly maintained to enhance luminous efficiency. To this end, there is provided a light emitting diode comprising at least one light emitting diode chip, lead terminals for use in applying electric power to the light emitting diode chip, and a frame that is used for mounting the light emitting diode chip thereon and is formed to have a predetermined height and a shape corresponding to that of the light emitting diode chip.
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European Search Report dated Dec. 17, 2010 in corresponding appl. EP 05 82 0596.
Kim Do Hyung
Lee Chung-Hoon
Andujar Leonardo
H.C. Park & Associates PLC
Klein Jordan
Seoul Semiconductor Co. Ltd.
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