SiC semiconductor device

Details SiC semiconductor device SiC semiconductor device

1996-09-30

1999-03-02

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257154, H01L 2976

Patent

active

058775153

ABSTRACT:
A semiconductor device structure having an epitaxial layer, formed of silicon for example, is disposed on a high band-gap material, such as silicon carbide, which is in turn disposed on a semiconductor substrate, such as silicon. The high band gap material achieves a charge concentration much higher than that of a conventional semiconductor material for the same breakdown voltage.

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Shenoy P et al: "Vertical Schottky Barrier Diodes on 3C-SiC Grown on Si", International Electron Devices Meeting 1994.Technical Digest (Cat. No. 94CH35706). Proceedings of 1994 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 11-14 Dec. 1994, ISBN O-7803-2111-1, 1994, New York, NY, USA, IEEE, USA, pp. 411-414 XPOOO585521.

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