Single-electron controlling magnetoresistance element

Details Single-electron controlling magnetoresistance element Single-electron controlling magnetoresistance element

1997-09-29

1999-03-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257421, H01L 2906, H01L 3900

Patent

active

058775110

ABSTRACT:
A single-electron controlling magnetoresistance element which comprises, a couple of first ferromagnetic bodies each magnetized in a first direction, a second ferromagnetic body magnetized in a second direction in an initial direction and sandwiched between the couple of first ferromagnetic bodies with a tunnel junction interposed therebetween respectively, and means for directing the magnetization direction of the second ferromagnetic body to a direction different from the second direction, wherein a charging energy E.sub.c of a single electron in at least one of the tunnel junctions interposed between the first ferromagnetic body and the second ferromagnetic body meets the following conditions:

REFERENCES:
patent: 5581091 (1996-12-01), Moskovits
patent: 5757056 (1998-05-01), Chui
ONO et al.; "Magnetoresistance of Ni/NiO/Co Small Tunnel Junctions in Coulomb Blockade Regime"; Journal of the Physical Society of Japan vol. 65 No. 11, Nov. 1996, pp. 3449-3451.

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