Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-02-28
1999-03-02
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 11, 257 18, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
058775102
ABSTRACT:
There are provided on a substrate a block layer having an electron affinity smaller than that of the substrate, a p-type strained superlattice structure having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer for accommodating a bending portion of the energy band. The superlattice structure is formed of a multilayer in which a strained well layer and a barrier layer are alternately laminated plural times. The strained well layer has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer has a conduction band lower in energy than that of the strained well layer and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure due to compressive stress in the strained well layer.
REFERENCES:
patent: 3968376 (1976-07-01), Pierce et al.
patent: 5404026 (1995-04-01), Mariella, Jr. et al.
Geurley et al, "Diffusion dynamics of holes in . . . strained-layer super lattices", Appl Phys Lttr, 49(2), 14 Jul. 1986.
Schaff et al; "Strained-Layer Superlattices: Materials Science and Technology, Semiconductors and Semimetals" vol. 33; 1991; pp. 74-79; Academic Press.
Maruyama et al; "Physical Review Letters"; May 6, 1991; vol. 66, No. 18; pp. 2376-2379; The American Physical Society.
Nakanishi et al; "Physics Letters A"; Jan. 1991, vol. 158; pp. 345-349; Elseview Science Publishers B.V.
Omori et al; "Physical Review Letters"; Dec. 2, 1991, vol. 67, No. 23; pp. 3294-3297; The American Physical Society.
Lampel, G. et al; "Proposal For An Efficient Source of Polarized . . . " Solid State Communications, vol. 16, pp. 877-880, 1975.
Omori, T. et al; "Large Enhancement of Polarization Observed By . . . " Physical Review Letters, vol. 67, pp. 3294-3297, Dec. 2, 1991.
Nakanishi, T. et al; "Large Enhancement of Spin Polarization Observed by Photoelectrons From a Strained GaAs Layer" Physical Letters A, vol. 158, pp. 345-349, 1991.
Baba Toshio
Kurihara Yoshimasa
Mizuta Masashi
Nakanishi Tsutomu
Omori Tsunehiko
Meier Stephen D.
NEC Corporation
LandOfFree
Spin polarized electron semiconductor source and apparatus utili does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spin polarized electron semiconductor source and apparatus utili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin polarized electron semiconductor source and apparatus utili will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-425242