Method for producing a semiconductor device

Details Method for producing a semiconductor device Method for producing a semiconductor device

1980-11-19

1983-02-08

Ozaki, G.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29576B, 29576W, 29580, 148175, 148187, 357 34, H01L 2126

Patent

active

043720307

ABSTRACT:
A method for producing a semiconductor device comprises the steps of selectively etching a part of a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate where an isolating oxide layer is to be formed; introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part, by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer to form a substrate contact; thermally oxidizing said etched part to form an isolating oxide layer and forming a semiconductor element in said second conductivity type semiconductor layer.

REFERENCES:
patent: 3911471 (1975-10-01), Kooi et al.
patent: 3928091 (1975-12-01), Tachi et al.
patent: 3961356 (1976-06-01), Kooi
patent: 3992232 (1976-11-01), Kaiji et al.
patent: 3993513 (1976-11-01), O'Brien
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4283236 (1981-08-01), Sirsi
Neues Aus Der Tecknik, Dec. 1, 1976, p. 1.
European Search Report, dated Dec. 17, 1981, in application No. EP80 107029.

Affiliated with

Also associated with

Rating

Method for producing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-42523