Method of forming pinned photodiode (PPD) pixel with high...

Details Method of forming pinned photodiode (PPD) pixel with high... Method of forming pinned photodiode (PPD) pixel with high...

2008-08-26

2010-11-16

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S022000, C438S508000

Reexamination Certificate

active

07833814

ABSTRACT:
A method for forming a pixel image sensor that has a high shutter rejection ratio for preventing substrate charge leakage and prevents generation of photoelectrons within a floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.

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