Etching method and etching apparatus

Details Etching method and etching apparatus Etching method and etching apparatus

2005-11-18

2010-11-30

Culbert, Roberts (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S718000, C216S075000, C216S079000

Reexamination Certificate

active

07842617

ABSTRACT:
The present invention is an etching method for performing an etching process in the presence of a plasma on an object to be processed in which a layer to be etched made of a tungsten-containing material is formed on a base layer made of a silicon-containing material in a process vessel capable of being evacuated to create therein a vacuum, wherein a chlorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas are used as an etching gas for performing the etching process.

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Notification of Transmittal of Copies of Translation of the International Preliminary Report on Patentability (Form PCT/IB/338) in connection with PCT/JP2005/021256, dated Jan. 2004.
International Preliminary Report on Patentability (Form PCT/IB/373) in connection with PCT/JP2005/021256, dated Jan. 2004.
Written Opinion of the International Searching Authority (Form PCT/ISA/237) in connection with PCT/JP2005/021256, dated Jan. 2004.

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