Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-10-09
2010-11-23
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S532000, C257S536000, C257SE21538, C257SE21577, C257SE21578, C257SE29025, C438S324000, C438S639000, C438S238000
Reexamination Certificate
active
07838962
ABSTRACT:
In manufacturing a semiconductor device including a substrate having a (111)-plane orientation and an off-set angle in a range between 3 degrees and 4 degrees, a capacitor, a transistor and a diffusion resistor are formed in the substrate, each of which are separated by a junction separation layer. A first silicon nitride film is formed by low pressure CVD over a surface of the substrate except a bottom portion of a contact hole and a portion over the junction separation layer, and a silicon oxide film is formed by low pressure CVD over the first silicon nitride film. A second silicon nitride film as a protecting film is formed by plasma CVD so as to cover the semiconductor device finally. Therefore, the semiconductor device having high reliability can be obtained.
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Denso Corporation
Posz Law Group , PLC
Wilczewski Mary
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