Semiconductor device

Details Semiconductor device Semiconductor device

1990-07-03

1991-04-16

Hille, Rolf

357 231, H01L 2701, H01L 2906

Patent

active

050087240

ABSTRACT:
A semiconductor device comprising a semiconductor substrate, a field effect transistor formed in the substrate, and a diode connected to the field effect transistor and formed on the insulation film formed on the substrate. Since the diode is electrically insulated from the substrate by the insulation film, no parasitic PNPN thyristor is formed in the semiconductor substrate. Therefore, a latch-up is prevented from occurring in the semiconductor device.

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