Semiconductor device with stepped well

Details Semiconductor device with stepped well Semiconductor device with stepped well

1990-01-02

1991-04-16

Mintel, William

357 52, 357 90, H01L 2910, H01L 2934

Patent

active

050087207

ABSTRACT:
A semiconductor device comprises a first conductivity type semiconductor layer and a second conductivity type well region which is formed on the semiconductor layer. The well region includes a first semiconductor region of a first depth and a second semiconductor region of a second depth deeper than the first depth which is provided in the central portion of the first semiconductor region. The ratio of the first depth to the second depth is settled in a range from 0.85 to 0.95 in order to increase the breakdown voltage of the semiconductor device.

REFERENCES:
patent: 4803532 (1989-02-01), Mihara
patent: 4810665 (1989-03-01), Chang et al.

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