Method for independently detecting signals in a...

Details Method for independently detecting signals in a... Method for independently detecting signals in a...

2007-05-22

2010-06-15

Luu, Thanh X (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C348S308000, C250S208100

Reexamination Certificate

active

07737391

ABSTRACT:
A double-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cell is provided. The imager cell is fabricated from a silicon-on-insulator (SOI) substrate including a silicon (Si) substrate, a silicon dioxide insulator overlying the substrate, and a Si top layer overlying the insulator. A photodiode set is formed in the SOI substrate, including a first and second photodiode formed as a double-junction structure in the Si substrate. A third photodiode is formed in the Si top layer. A (imager sensing) transistor set is formed in the top Si layer. The transistor set is connected to the photodiode set and detects an independent output signal for each photodiode. The transistor set may be an eight-transistor (8T), a nine-transistor (9T), or an eleven-transistor (11T) cell.

REFERENCES:
Findlater K.M. et al., “Buried double junction pixel using green and magenta filters”, IEEE Workshop on CCDs & Advanced Image Sensors, Karuizawa, Nagano Japan, pp. 6.1-6.4, Jun. 1999.

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