Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-07-24
2010-06-08
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C365S148000, C365S163000
Reexamination Certificate
active
07732798
ABSTRACT:
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
REFERENCES:
patent: 6448576 (2002-09-01), Davis et al.
patent: 6912146 (2005-06-01), Gill et al.
patent: 6970034 (2005-11-01), Harris
patent: 7026639 (2006-04-01), Cho et al.
patent: 7196346 (2007-03-01), Okuno
patent: 7208751 (2007-04-01), Ooishi
patent: 7221579 (2007-05-01), Krusin-Elbaum et al.
patent: 7324365 (2008-01-01), Gruening-von Schwerin et al.
patent: 7391642 (2008-06-01), Gordon et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0121789 (2005-06-01), Madurawe
patent: 2005/0158950 (2005-07-01), Scheuerlein et al.
patent: 2005/0188230 (2005-08-01), Bilak
patent: 2006/0017076 (2006-01-01), Lankhorst et al.
patent: 2006/0158928 (2006-07-01), Pellizzer et al.
patent: 2006/0278895 (2006-12-01), Burr et al.
patent: 2006/0279978 (2006-12-01), Krusin-Elbaum et al.
patent: 2007/0096071 (2007-05-01), Kordus, II et al.
patent: 2007/0099405 (2007-05-01), Olivia et al.
patent: 2007/0295948 (2007-12-01), Lam et al.
patent: 2008/0012094 (2008-01-01), Ma et al.
patent: 2008/0017842 (2008-01-01), Happ et al.
patent: 2008/0044632 (2008-02-01), Liu et al.
patent: 2008/0048169 (2008-02-01), Doyle et al.
patent: 2008/0158942 (2008-07-01), Nirschl et al.
patent: 2008/0210925 (2008-09-01), Krusin-Elbaum et al.
S. Lai et al; “OUM—A 180 nm Nonvaltile Memory Cell Element Technology for Stand Alone and Embedded Applications;” IEEE, 2001, pp. 36.5.1-36.5.4.
Exploring Potential Benefits Of 3D FPGA Integration, pp. 1-6.
Aoki et al., Temperature Dependence Of TaSiN Thin Film Resistivity From Room Temperature To 900 Degrees, Jpn. J. Appl. Phys., Jun. 15, 2001, pp. L603-L605, vol. 40, The Japan Society Of Applied Physics, Japan.
Volkert et al., Modeling Of Laser Pulsed Heating And Quenching In Optical Data Storage Media, Journal Of Applied Physics, Aug. 15, 1999, pp. 1808-1816, vol. 86, No. 4, American Institute of Physics.
Lu Cheng et al., Experimental And Theoretical Investigations Of Laser-Induced Crystallization And Amoerphization In Phase-Change Optical Recording Media, Journal Of Applied Physics, Nov. 1, 1997, pp. 4183-4191, vol. 82, No. 9, American Institute Of Physics.
C.J. Tymczak and John R. Ray, Asymetric Crystallization and Melting Kinetics In Sodium: A Molecular-Dynamics Study, Physical Review Letters, Mar. 12, 1990, pp. 1278-1281, vol. 64, No. 11, The American Physical Society.
Erwin R. Meinders and Martjin H. R. Lankhorst, Determination Of The Crystallization Kinetics Of Fast-Growth Phase-Change Materials For Mark-Formation Prediction, Jpn. J. Appl. Phys., Feb. 2003, pp. 809-812, vol. 42, No. 2B, The Japan Society Of Applied Physics.
C.A. Angell, Formation Of Glasses From Liquids And Biopolymers, Science, Mar. 31, 1995, pp. 1924-1934, vol. 267.
L. Van Pieterson, M.H.R. Lankhorst, M. Van Schijndel, A.E. Kuiper And J.H.J. Roosen, Phase-Change Recording Materials With A Growth-Dominated Crystallization Mechanism: A Materials Overview, Journal Of Applied Physics, 2005, pp. 1-7, American Institute Of Physics.
What Are CPLDs And FPGAs?, file://C:\DOCUME˜1\ADMINI˜1\LOCALS˜1\Temp\V9K43UPW.htm, Jul. 20, 2005, pp. 1-3.
J. Maimon et al., Chalcogenide-Based Non-Volitile Memory Technology, IEEE, 2001, pp. 5-2289—5-2294.
Young-Tae Kim et al., Study On Cell Characteristics Of PRAM Using The Phase-Change Simulation, IEEE, 2003, pp. 211-214.
S. Tyson et al., Nonvolitile, High Density, High Performance Phase-Change Memory, IEEE, 2000, pp. 385-390.
C.J. Glassbreenner et al., Thermal Conductivity Of Silicon And Geranium From 3 K To The Melting Point, Physical Review, May 18, 1964, pp. A1058-A1069, vol. 134, No. 4A.
U.S. Appl. No. 11/958,298, filed Dec. 17, 2007.
U.S. Appl. No. 11/672,110, filed Feb. 7, 2007.
U.S. Appl. No. 11/833,321, filed Aug. 2, 2007.
U.S. Appl. No. 11/833,354, filed Aug. 3, 2007.
Elmegreen Bruce G.
Krusin-Elbaum Lia
Lam Chung Hon
Newns Dennis M.
Wordeman Matthew R.
Ahmed Selim
Alexanian Vazken
Cantor & Colburn LLP
International Business Machines - Corporation
Purvis Sue
LandOfFree
Programmable via structure for three dimensional integration... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Programmable via structure for three dimensional integration..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable via structure for three dimensional integration... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4245523