Resistive memory element and method of fabrication

Details Resistive memory element and method of fabrication Resistive memory element and method of fabrication

2008-02-08

2010-06-22

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE21001, C257SE47001

Reexamination Certificate

active

07741630

ABSTRACT:
An integrated circuit including a memory cell and a method of manufacturing the integrated circuit are described. The memory cell includes a buried gate select transistor and a resistive memory element coupled to the buried gate select transistor. The resistive memory element stores information based on a resistivity of the resistive memory element.

REFERENCES:
patent: 2005/0073803 (2005-04-01), Cho
patent: 2006/0170027 (2006-08-01), Lee et al.
patent: 2006/0220108 (2006-10-01), Hashimoto
patent: 2007/0007571 (2007-01-01), Lindsay et al.
patent: 2007/0075361 (2007-04-01), Luyken et al.
patent: 10 2005 047 058 (2007-04-01), None
patent: 10 2006 023 609 (2007-11-01), None
Gibbons, et al., “Switching Properties of Thin NiO Films*,” Solid-State Electronics, Mar. 30, 1964, pp. 785-797, vol. 7, Pergamon Press, Great Britain.
Hiatt, et al., “Bistable Switching in Niobium Oxide Diodes1,” Applied Physics Letters, Mar. 15, 1965, pp. 106-108, vol. 6, No. 6, American Institute of Physics, Melville, NY.
Argall, “Switching Phenomena in Titanium Oxide Thin Films,” Solid-State Electronics, Jul. 27, 1968, pp. 535-541, vol. 11, Pergamon Press, Great Britain.
Baek, et al., “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Uni-polar Voltage Pulses,” International Electron Devices Meeting, 2004, 26 pages, Samsung Electronics Co., Ltd., Korea.
Seo, et al., “Reproducible Resistance Switching in Polycrystalline NiO Films,” Applied Physics Letters, Dec. 6, 2004, pp. 5655-5657, vol. 85, No. 23, American Institute of Physics, Melville, NY.
Seo, et al., “Conductivity Switching Characteristics and Reset Currents in NiO Films,” Applied Physics Letters, Feb. 25, 2005, pp. 3509-3511, vol. 86, No. 9, American Institute of Physics, Melville, NY.

Affiliated with

Also associated with

Rating

Resistive memory element and method of fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistive memory element and method of fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive memory element and method of fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4245194