Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-02-08
2010-06-29
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21257
Reexamination Certificate
active
07745339
ABSTRACT:
A method for forming a fine pattern of a semiconductor device comprises the steps of: forming a first hard mask pattern having a width of W1and a thickness of T1over an underlying layer formed over a semiconductor substrate; forming a second hard mask film with a planar type over the resulting structure and planarizing the second hard mask s to expose the first hard mask pattern; removing the first hard mask pattern by a thickness T2from the top surface (0<T2<T1); performing a trimming process on the second hard mask film to form a second hard mask pattern having a slope side wall; performing a second trimming process on the second hard mask pattern to separate the second hard mask pattern from the first hard mask pattern and form a third hard mask pattern having a width of W2; and patterning the underlying layer using the first hard mask pattern and the third hard mask pattern as etching masks.
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Jung, Jae Chang, U.S. Appl. No. 11/672,680, filed Feb. 8, 2007 for “Method for Forming Fine Pattern of Semiconductor Device.”
Blum David S
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
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