Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2008-07-08
2010-11-09
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C257SE21704, C257SE21001
Reexamination Certificate
active
07829431
ABSTRACT:
A single-crystal semiconductor layer is provided in a large area over a large-sized glass substrate, whereby a large-scale SOI substrate is obtained. A single-crystal semiconductor substrate provided with an embrittlement layer and a dummy substrate are bonded to each other, and the single-crystal semiconductor substrate is separated at the embrittlement layer as a boundary by heat treatment to form a piece of single-crystal semiconductor over the dummy substrate. The dummy substrate is divided to form a piece of single-crystal semiconductor. The piece of single-crystal semiconductor is bonded to a supporting substrate, and the piece of single-crystal semiconductor is separated from the dummy substrate. Then, a plurality of pieces of single-crystal semiconductor are arranged and transferred to the large-sized glass substrate.
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Fan Michele
Maldonado Julio J
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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