Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-03-31
2010-11-02
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C438S457000, C438S459000
Reexamination Certificate
active
07825007
ABSTRACT:
After the plurality of single-crystal semiconductor layers are provided adjacent to each other with a certain distance over a glass substrate which is a support substrate, heat treatment is performed on the glass substrate. The support substrate shrinks by this heat treatment, and the adjacent single-crystal semiconductor layers are in contact with each other due to the shrink. Energy beam irradiation is performed with the plurality of single-crystal semiconductor layers being in contact with each other, the plurality of single-crystal semiconductor layers are integrated, and thus a continuous single-crystal semiconductor layer is formed.
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Arai Yasuyuki
Yamazaki Shunpei
Jung Michael
Richards N Drew
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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