Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-01-10
2010-06-22
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185200, C365S185240
Reexamination Certificate
active
07742339
ABSTRACT:
Selecting a read voltage level for a NVM cell by using an initial value for the read voltage and performing a read operation, comparing an actual number of bits found to an expected number of bits and, if there is a discrepancy between the actual number and the expected number, adjusting the read voltage level, based on variable data such as statistics available, level occupation, neighbor level, previous chunks data, and other data used during read, program or erase. For example, based on a number of missing bits, or upon a result of a previous read operation, or a result obtained at another program level, or upon how many times the memory cell has been cycled, or upon how many memory cells are at each program level, or on a number of bits at another program level in a selected chunk of memory.
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Cohen Guy
Rizel Arik
Eitan Mehulal Law Group
Nguyen Tan T.
Saifun Semiconductors Ltd.
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