Integrated circuit micro-module

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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Details

C438S015000, C438S025000, C438S051000, C438S107000, C438S108000, C257SE21499, C257SE21536, C257SE21538, C257SE21705

Reexamination Certificate

active

07842544

ABSTRACT:
Various apparatuses and methods for forming integrated circuit packages are described. One aspect of the invention pertains to a wafer level method for packaging micro-systems. A substrate prefabricated with metal vias can be provided. The substrate can also be made by forming holes in a substrate and electroplating an electrically conductive material into the holes to form the vias. Multiple microsystems are formed on a top surface of the substrate. Each microsystem is formed to include multiple layers of planarizing, photo-imageable epoxy, one or more interconnect layers and an integrated circuit. Each interconnect layer is embedded in an associated epoxy layer. The integrated circuit is positioned within at least an associated epoxy layer. The interconnect layers of the microsystems are formed such that at least some of the interconnect layers are electrically coupled with one or more of the metal vias in the substrate. Molding material is applied over the top surface of the substrate and the microsystems to form a molded structure. Portions of the substrate can be removed. The molded structure can be singulated to form individual integrated circuit packages. Each of the integrated circuit packages contains at least one microsystem. Various embodiments involve forming conductive pads on the top surface of the substrate instead of the metal vias.

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