Light emitting diode of high quantum efficiency and system...

Details Light emitting diode of high quantum efficiency and system... Light emitting diode of high quantum efficiency and system...

2008-09-02

2010-11-02

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S098000, C257SE33005, C257SE33067

Reexamination Certificate

active

07825418

ABSTRACT:
A light emitting diode (LED) includes a transparent substrate, a first type cladding layer, an active layer, a second type cladding layer, and first and second electrodes. The first type cladding layer is disposed on the transparent substrate. The active layer and the second electrode are juxtaposed on the first type cladding layer. The second type cladding layer is disposed on the active layer. The second electrode is disposed on the second type cladding layer. The first and second type cladding layers are doped with nanoparticles.

REFERENCES:
patent: 7265374 (2007-09-01), Lee et al.
patent: 2005/0199888 (2005-09-01), Seong et al.
patent: 2005/0199895 (2005-09-01), Seong et al.
patent: 2006/0278880 (2006-12-01), Lee et al.
patent: 2008/0303055 (2008-12-01), Seong

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