Method for producing a semiconductor device with a particular so

Details Method for producing a semiconductor device with a particular so Method for producing a semiconductor device with a particular so

1994-12-05

1996-12-10

Thomas, Tom

Fishing, trapping, and vermin destroying

437 34, 437 57, H01L 218238

Patent

active

055830757

ABSTRACT:
There is provided a semiconductor device with very small functional elements, which can be constructed by necessary minimum components without any unnecessary surface area, thus being capable of significantly reducing the layout area and adapted for achieving a fine geometry and a high level of integration. The semiconductor device is provided with a first semiconductor area of a first conductive type (for example a p.sup.- well) and a second semiconductor area formed on or under the first semiconductor area and having a second conductive type different from the first conductive type (for example a source or drain area), in which an electrode electrically connected to the first semiconductor area is formed through the second semiconductor area, and the first and second semiconductor areas are shortcircuited by the above-mentioned electrode.

REFERENCES:
patent: 4729964 (1988-03-01), Natsuaki et al.
patent: 4740826 (1985-09-01), Chatterjee
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4845051 (1989-07-01), Cogan et al.
patent: 4898835 (1990-02-01), Cawlfield
patent: 4967257 (1990-10-01), Inoue
patent: 5010386 (1991-04-01), Groover, III
patent: 5016070 (1991-05-01), Sanderson
patent: 5021845 (1991-06-01), Hashimoto et al.
patent: 5077228 (1991-12-01), Eklund et al.
patent: 5154949 (1992-10-01), Shindo et al.
patent: 5180687 (1993-01-01), Mikoshiba et al.
patent: 5330633 (1994-07-01), Matsumoto et al.

Affiliated with

Also associated with

Rating

Method for producing a semiconductor device with a particular so does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a semiconductor device with a particular so, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a semiconductor device with a particular so will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-423972