PMOS transistors with different breakdown voltages formed in the

Details PMOS transistors with different breakdown voltages formed in the PMOS transistors with different breakdown voltages formed in the

1995-06-05

1996-12-10

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 29, 437 56, 148DIG82, H01L 21265

Patent

active

055830617

ABSTRACT:
A process is disclosed (hereafter referred to as the "BiCDMOS Process") which simultaneously forms bipolar transistors, relatively high voltage CMOS transistors, relatively low voltage CMOS transistors, DMOS transistors, zener diodes, and thin-film resistors, or any desired combination of these, all on the same integrated circuit chip. The process uses a small number of masking steps, forms high performance transistor structures, and results in a high yield of functioning die. Isolation structures, bipolar transistor structures, CMOS transistor structures, DMOS transistor structures, zener diode structures, and thin-film resistor structures are also disclosed.

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