Method of forming a device isolation film of a semiconductor...

Details Method of forming a device isolation film of a semiconductor... Method of forming a device isolation film of a semiconductor...

2007-10-15

2010-12-28

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S400000, C257SE21540

Reexamination Certificate

active

07858488

ABSTRACT:
A method of forming a device isolation film for a semiconductor device comprising forming a trench on a silicon semiconductor substrate, rounding an upper corner of the trench using an in-situ plasma method, filling the trench by forming an insulating layer over the silicon semiconductor substrate, and forming a shallow trench isolation area by performing a planarization process on the insulating layer so as to expose the silicon semiconductor substrate.

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