Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-12-21
2010-06-01
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S198000, C257SE29188
Reexamination Certificate
active
07728357
ABSTRACT:
The object of the present invention is to provide a heterojunction bipolar transistor with high breakdown tolerance which can be manufactured at a high reproducibility and a high yield, the heterojunction bipolar transistor includes: a sub-collector layer; a collector layer formed on the sub-collector layer; a base layer formed on the collector layer; and an emitter layer, which is formed on the base layer and is made of a semiconductor that has a larger bandgap than a semiconductor of the base layer, in which the collector layer includes: a first collector layer formed on the sub-collector layer; a second collector layer formed on the first collector layer; and a third collector layer formed between the second collector layer and the base layer, a semiconductor of the first collector layer differs from semiconductors of the third collector layer and the second collector layer, and an impurity concentration of the second collector layer is lower than an impurity concentration of the sub-collector layer and higher than an impurity concentration of the third collector layer.
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Miyajima Kenichi
Miyamoto Hirotaka
Murayama Keiichi
Tamura Akiyoshi
Greenblum & Bernstein P.L.C.
Panasonic Corporation
Tran Minh-Loan T
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