Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2008-06-30

2010-06-29

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23180

Reexamination Certificate

active

07745936

ABSTRACT:
A semiconductor integrated circuit device includes a substrate having a PROM formed thereon in which the data memory state of the PROM is changed by the irradiation of light, and a multilayer wiring structure formed on the same side of the substrate as the PROM is formed. The multilayer wiring structure includes a transparent area, a shield area, and a PAD portion. The transparent area is formed from transparent material at a position opposite to the PROM area where the PROM is formed, and used as a light guiding path from the outside of the multilayer wiring structure to the PROM. The shield area is formed continuously from shielding materials arranged in several layers in the periphery of the transparent area. The PAD portion is formed on the outside of the shield area in regard to the transparent area, and controls the memory state of the PROM.

REFERENCES:
patent: 2007/0222043 (2007-09-01), Watanabe et al.
patent: 5-38915 (1993-05-01), None
patent: 7-66378 (1995-03-01), None
patent: 2003-124363 (2003-04-01), None
patent: 2006-154217 (2006-06-01), None
patent: 2006-154317 (2006-06-01), None

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