Strained-silicon-on-insulator single-and double-gate MOSFET...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S288000, C257S365000, C257SE21125, C257SE21193

Reexamination Certificate

active

07812340

ABSTRACT:
A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.

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International Preliminary Report dated Sep. 14, 2006.

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