Semiconductor device having a semiconductor body embedded in an

Details Semiconductor device having a semiconductor body embedded in an Semiconductor device having a semiconductor body embedded in an

1991-06-06

1992-05-26

James, Andrew J.

357 54, 357 71, H01L 2328

Patent

active

051172780

ABSTRACT:
Semiconductor device with a wiring pattern 3, 6 is provided with an insulating layer 4 embedded in an envelope 5 made of synthetic material. To prevent hair cracks in the insulating layer 4, the thickness of the insulating layer 4 is so chosen that the lowest point of top 8 of the insulating layer 4 is at a higher leverl than the highest point of the wiring pattern 3, 6.

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Lee, H. et al. Epoxy Resins, Their Applicaitons and Technology McGraw-Hill, 1957, pp. 146-154.
Ghandhi, S. VLSI Fabrication Principles, John Wiley, 1983, pp. 422-430.

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